c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 www. ruichips .com ru 60 e 25 l n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 6 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 25 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 100 a t c =25 c 25 i d continuous drain current t c =100 c 19 a t c =25 c 50 p d maximum power dissipation t c =100 c 25 w r q jc thermal resistance - junction to case 3 c /w drain - source avalanche ratings e as avala nche energy, single pulsed 150 m j ? 60 v/ 25 a, r ds ( on ) = 35 m ( tpy.)@ v gs =10v r ds ( on ) = 42 m ( tpy.)@ v gs = 4.5 v ? super high dense cell design ? esd protected ? reliable and rugged ? lead free and green devices available ( rohs compliant) ? power management . absolute maximum ratings n - channel mosfe t to252
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 2 www. ruichips .com ru 60 e 25 l electrical characteristics ( t a =25 c unless otherwise noted) ru 60 e 25 l symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - so urce breakdown voltage v gs =0v, i ds =250 m a 60 v v ds = 6 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 1.5 2 2.7 v i gss gate leakage current v gs = 2 0 v, v ds =0v 10 m a v gs = 10 v, i ds = 2 5 a 35 4 0 m w r ds ( on ) drain - source on - state resistance v gs = 4.5 v, i ds = 17 a 42 48 m w notes : pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature . limited by t jmax , i as = 11 a, v dd = 48 v, r g = 50 , starting t j = 25 c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 2 5 a, v gs =0v 0.8 1. 2 v t rr reverse recovery time 4 0 ns q rr reverse recove ry charge i sd = 2 5 a, dl sd /dt=100a/ m s 7 0 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.8 w c iss input capacitance 1340 c oss output capacitance 285 c rss reverse transfer capacitance v gs =0v, v ds = 30 v, frequency=1.0mhz 90 pf t d ( on ) turn - on de lay time 10 t r turn - on rise time 13 t d ( off ) turn - off delay time 28 t f turn - off fall time v dd = 30 v, r l = 2.4 w , i ds = 2 5 a, v gen = 10v, r g = 6 w 15 ns gate charge characteristics q g total gate charge 55 q gs gate - sou rce charge 8 q gd gate - drain charge v ds = 48 v, v gs = 10v, i ds = 2 5 a 28 nc
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 3 www. ruichips .com ru 60 e 25 l typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) squa re wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 4 www. ruichips .com ru 60 e 25 l typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 5 www. ruichips .com ru 60 e 25 l typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temper ature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 6 www. ruichips .com ru 60 e 25 l avalanche test circuit and w aveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 7 www. ruichips .com ru 60 e 25 l ordering and marking information ru 60 e 25 package (available) l : to252 operatin g temperature range c : - 55 to 1 75 oc assembly material g : green & lead free packaging t : tube tr : tape & reel
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 8 www. ruichips .com ru 60 e 25 l package information to252 - 2l all dimensions refer to jedec standard do not include mold flash or protr usions mm inch mm inch symbol min max min max symbol min max min max a 2. 200 2.400 0.087 0.094 l 9.800 10.400 0.386 0.409 a1 0.000 0.127 0.000 0.005 l1 2.900 ref. 0.114 ref. b 0.660 0.860 0.026 0.034 l2 1.400 1.700 0.055 0.067 c 0.460 0.580 0.018 0.023 l3 1.600 ref. 0.063ref. d 6.500 6.700 0.256 0.264 l4 0.600 1.000 0.024 0 .039 d1 5.100 5.460 0.201 0.215 1.100 1.300 0.043 0.051 d2 4.830 ref. 0.190 ref. 0 8 0 8 e 6.000 6.200 0.236 0.244 h 0.000 0.300 0.000 0.012 e 2.186 2.386 0.086 0.094 v 5.350 ref. 0.211 ref.
c opyright ruichips semiconductor co . , ltd rev . a C feb ., 2011 9 www. ruichips .com ru 60 e 25 l customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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